Topic: Electronic Devices and Circuits
The built in potential (diffusion potential) in a p-n junction
- A. is equal to the difference in the fermi level of the 2 sides, expressed in volts
- B. increase with the increase in the doping levels of the two sides
- C. increase with the increase in temperature
- D. all of the above
Answer: D. all of the above
Explanation: The built-in potential is given by $V_0 = V_T \ln\left(\frac{N_A N_D}{n_i^2}\right)$. It is equal to the difference in the Fermi level of the two sides. As doping concentrations ($N_A$ or $N_D$) increase, $V_0$ increases. According to the provided solution key, it is also stated that as temperature increases, $V_0$ increases. Thus, all statements are considered correct.