ISRO Electronics & Communication (ECE) 2016 - Question 44

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Topic: Electronic Devices and Circuits

If a donor type impurity is added to the semiconductor, then at a given temperature, the Fermi Level

  • A. Moves towards the center of the energy gap
  • B. Moves towards the valence band
  • C. Moves towards the conduction band
  • D. Doesn't change

Answer: C. Moves towards the conduction band

Explanation: The Fermi level position is given by $E_C - E_F = kT \ln\left(\frac{N_C}{N_D}\right)$. As the donor concentration ($N_D$) increases, the term $kT \ln\left(\frac{N_C}{N_D}\right)$ decreases, which means the difference between $E_C$ and $E_F$ becomes smaller. Thus, the Fermi level moves towards the conduction band.

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