Topic: Electronic Devices
The relation between ID and Vgs of a MOSFET in the saturation region is
- A. Exponential
- B. Quadratic
- C. Logarithmic
- D. Hyperbolic
Answer: B. Quadratic
Explanation: In the saturation region, the drain current $I_D$ of a MOSFET follows the square-law given by the equation: $I_D = \frac{1}{2}\mu C_{ox} \frac{W}{L} (V_{gs} - V_{th})^2$. Hence, the relationship between $I_D$ and $V_{gs}$ is quadratic.