ISRO Electronics & Communication (ECE) 2017 - Question 4

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Topic: Electronic Devices

Which of the following is NOT a characteristic of Schottky Diode ?

  • A. Thermoinic emission of carriers across Schottky barrier
  • B. Current conduction in Schottky diodes is by majority carriers
  • C. Switching speed of Schottky diodes is less compared to p-n junction diodes
  • D. Schottky diode comprises of Metal-Semiconductor junction

Answer: C. Switching speed of Schottky diodes is less compared to p-n junction diodes

Explanation: A Schottky diode is formed by a metal-semiconductor junction. Because conduction is primarily by majority carriers, there is negligible minority charge carrier storage time. This makes its switching speed much higher, not lower, than that of a standard p-n junction diode.

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