ISRO Electronics & Communication (ECE) 2012 - Question 3

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Topic: Electronic Devices

Silicon is not suitable for fabrication of light emitting diodes because it is

  • A. An indirect band gap semiconductor
  • B. A direct band gap semiconductor
  • C. A wide band gap semiconductor
  • D. A narrow band gap semiconductor

Answer: A. An indirect band gap semiconductor

Explanation: Since silicon is an indirect band gap semiconductor so electron cannot fall directly to the valence band but must undergo a momentum change as well as change in energy. So, energy is released as heat along with light, so not used.

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