ISRO Electronics & Communication (ECE) 2012 - Question 5

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Topic: Electronic Devices

The following statements are made for NMOS and PMOS:
1. The carrier mobility in NMOS is higher
2. PMOS require less area than NMOS
3. NMOS circuits are smaller than PMOS
4. PMOS are faster in switching.
Of these, the true statements are:

  • A. 2 and 4 only
  • B. 2 and 3 only
  • C. 1 and 3 only
  • D. 1, 2 and 3 only

Answer: C. 1 and 3 only

Explanation: In n-MOS, conduction is mainly due to electrons and in p-MOS conduction is due to holes. $\mu_{n~si}=3800~cm^{2}/Vsec$, $\mu_{p~si}=1800~cm^{2}/Vsec$. So, higher the mobility, faster is the switching and n-MOS requires far lesser area than p-MOS.

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