ISRO Electronics & Communication (ECE) 2010 - Question 24

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Topic: Electronics Engineering

Which of the following parameters of a Silicon Schottky Diode is higher than that of a corresponding PN junction diode?

  • A. Forward voltage drop
  • B. Reverse recovery current
  • C. Reverse recovery time
  • D. Reverse leakage current

Answer: D. Reverse leakage current

Explanation: Detailed standard solution.

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