Topic: Electronic Devices
Dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junctions are
- A. Drift in forward bias, diffusion in reverse bias
- B. Diffusion in forward bias, drift in reverse bias
- C. Diffusion in both forward and reverse bias
- D. Drift in both forward and reverse bias
Answer: B. Diffusion in forward bias, drift in reverse bias
Explanation: In a forward-biased p-n diode, the dominant mechanism for the motion of charge carriers is the diffusion of majority carriers across the junction. In reverse bias, the small current that flows is due to the drift of minority charge carriers swept across the junction by the strong electric field in the depletion region.