ISRO Electronics & Communication (ECE) 2015 - Question 1

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Topic: Semiconductor Devices

Electron mobility of the following intrinsic elements in descending order is:

  • A. GaAs, Ge, Si
  • B. GaAs, Si, Ge
  • C. Si, Ge, GaAs
  • D. Ge, Si, GaAs

Answer: A. GaAs, Ge, Si

Explanation: The value of mobility of electrons in GaAs, Si, Ge are 8500, 3800, 1300 cm²/V-sec respectively. Hence, GaAs > Ge > Si.

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